Solid Phase Epitaxy

Solid-phase epitaxy abbr., TFE ( eng. Solid phase epitaxy abbr., Eng. SPE ) is a method of growing an epitaxial film, in which a disordered (amorphous) film is first deposited at a low temperature, after which it crystallizes at higher temperatures (which, however, below the melting point of this material).

Solid phase epitaxy is usually done by applying an amorphous film to a single crystal substrate. Then the substrate is heated, resulting in crystallization of the film. One of the types of solid-state epitaxy is considered annealing , which is used to recrystallize silicon layers amorphized by ion implantation. During this process, segregation and redistribution of impurities occurs at the boundary of the growing amorphous layer. This method is used to introduce impurities with low solubility into silicon ^[1] .