Mokerov, Vladimir Grigorievich

Vladimir Grigoryevich Mokerov was born on May 2, 1940 in the family of a rural teacher. Father - Grigory Ivanovich Mokerov, mother - Maria Sergeyevna Mokerova. In 1945, the family settled in Leningrad . In 1957 he graduated from Leningrad secondary school No. 35. In 1958 he entered the Physics Department of Leningrad State University . In 1963, Vladimir Grigoryevich graduated from Leningrad State University and entered the post of engineer at the Scientific Research Institute of Molecular Electronics of the Ministry of Economics of the USSR in Zelenograd . In 1967, it revealed anomalous phenomena during the semiconductor – metal phase transition in films of vanadium oxides ^[4] . In 1970 he defended his thesis on "Electrical and optical properties of vanadium dioxide in the semiconductor-semimetal phase transition." From 1967 to 1988, he taught at the Moscow Institute of Electronic Technology (MIET). In 1977, he headed the department for the study of epitaxial structures of NIIME. In 1982 he defended his doctoral dissertation on the topic "Study of vanadium oxides" ^[5] . In 1984, the first field effect transistor in the USSR based on the GaAs / GaAlAs heterostructure ^{[6] [7] was} created in the Mokerov department.

In the mid-1980s, he was the chief technologist of the USSR Ministry of Electronic Industry for the operational control of large integrated circuit technology . His work during this period made a significant contribution to improving the quality and level of domestic production of microcircuits. In 1988, he joined the Institute of Radio Engineering and Electronics of the Academy of Sciences of the USSR as the head of the Department of Micro- and Nanoelectronics. In 1989, V. G. Mokerov was awarded the title of professor in the specialty "Solid-State Electronics and Microelectronics". He taught at the Moscow Institute of Physics and Technology . In 1991, he transferred to teaching at the Moscow Institute of Radio Engineering, Electronics and Automation (MIREA), heading the Department of Semiconductor Devices. Since 1991 - Deputy Director of the IRE RAS for scientific work. In 1994, the first Russian transistor structures with the InGaAs / GaAs quantum well ^{[8] [9]} were created at the Mokerov Department ^.

April 16, 2002 - a resolution was issued by the Presidium of the Russian Academy of Sciences on the establishment of the Institute of Microwave Semiconductor Electronics of the Russian Academy of Sciences, whose director V. Mokerov was appointed. On February 26, 2008, the Department of Physics of Nanoscale Heterostructures and Microwave Nanoelectronics was established at the National Research Nuclear University MEPhI . Mokerov V.G. was appointed head of the department.

He was a member of the editorial boards of the journals Microelectronics, Radio Engineering and Electronics and Microsystem Technology. He was a full member - an academician of the Academy of Electrotechnical Sciences of the Russian Federation and a member of the International Institute of Electrical Engineers and Electronic Engineers (IEEE, New York , USA ). He died in Moscow on September 23, 2008. He was buried at the Vagankovsky cemetery in Moscow ^[10] .

On July 26, 2010, the Russian Academy of Sciences Corresponding Member Professor V. G. Mokerov Foundation was established ^[11] , which awards talented students and young scientists working in the field of heterostructured microwave electronics with scholarships and grants.

Since May 2010, the International Scientific and Practical Conference on Physics and Technology of Nanoheterostructural Microwave Electronics under the name “Mocker Readings” has been held annually at the NRNU MEPhI ^[12] .

By the order of the FANO of Russia dated January 24, 2018 No. 23, the Federal State Autonomous Scientific Institution of the Institute of Microwave Semiconductor Electronics of the Russian Academy of Sciences was assigned the name of corresponding member of the Russian Academy of Sciences Vladimir Grigoryevich Mokerov ^[13] .

• In 2006, for the first time in Russia, a monolithic integrated circuit of a three-stage low-noise amplifier based on AlGaAs / InGaAs / GaAs heterostructures was developed and manufactured ^[14] .
• In 2006-2008, under the guidance of Mokerov, the Institute for High-Frequency Physics and Technology began to develop domestic technology for manufacturing transistors on a wide-band AlGaN / GaN heterosystem, which resulted in the creation of transistors with a 170 nm gate, a current limiting frequency of 48 GHz, a power frequency of 100 GHz and an output power of more than 4 W / mm ^[15] .
• In 2008, for the first time in Russia, high-temperature and radiation-resistant microwave transistors based on AlGaN / GaN heterostructures with a breakdown voltage of more than 100 V., with a maximum specific power of at least 4.5 W per millimeter of gate length and a maximum power frequency of 110 were developed and manufactured. GHz, as well as a mushroom-shaped gate 100 nm long.
• The author of 350 scientific papers and 12 inventions ^[16] .

• February 13, 1986 - awarded the Order of Friendship of Peoples .
• March 16, 2000 - Laureate of the Prize of the Government of the Russian Federation in the field of science and technology .
• 2001 - awarded the Order of Honor .

• Profile of Vladimir Grigoryevich Mokerov on the official website of the Institute of Higher and Specialized Economic Problems of the Russian Academy of Sciences (neopr.) . Date of appeal September 12, 2018.
• VLADIMIR GRIGORIEVICH MOKEROV On the occasion of his 70th birthday (neopr.) . Radio Engineering and Electronics, 2010, Volume 55, No. 8, p. 1020-1024. Date of appeal September 12, 2018.
• In Russia there is solid-state microwave electronics. In memory of Vladimir Grigorievich Mokerov (neopr.) (September 3, 2010). Date of appeal September 12, 2018.
• In memory of Vladimir Grigoryevich Mokerov. On the occasion of the 70th birthday (neopr.) . Microelectronics, 2010, Volume 39, No. 5, p. 323-326. Date of appeal September 12, 2018.
• Institute of Microwave Semiconductor Electronics V. G. Mokerova of the Russian Academy of Sciences (Neopr.) . Date of appeal September 12, 2018.
• Memoirs of V. G. Mokerov ( Neopr .) . Date of appeal September 12, 2018.
• Mokerov V.G. Scientific heritage. M .: Agency CIP RSL, 2010. - 607 p.

• “Nanoheterostructural electronics” // Newspaper “Industrial weekly”, No. 16 (17), p.6, 2003 [3]
• “In Russia, its own solid-state microwave electronics is possible” // NTB Electronics Magazine, No. 8, 2003. [4] , [5]
• “Will the industry grow?” // Newspaper “Search”, No. 16 (986), p. 12, 2008.