Bublik, Vladimir Timofeevich

Vladimir Timofeevich Bublik was born on September 15, 1934. He graduated from MISiS in 1958. In 1960 he entered the postgraduate course of the Department of X-ray Diffraction and Metal Physics at MISiS. In 1964, he defended his thesis on the topic "Investigation of the mechanism of formation of recrystallization centers in copper and aluminum" ^[2] . Since 1963 he has been working at the Department of Materials Science of Semiconductors, in 1980 he defended his doctoral thesis "X-Ray Study of Atomic Structure and Thermodynamics of Solid Solutions of Semiconductors" ^[3] .

The main scientific activity of V.T. The bagel is devoted to the fundamental problems of the physical materials science of semiconductors ^[4] . This includes the study of some features of the interatomic interaction in semiconductor compounds: the study of atomic vibrations in compounds with a diamond-like lattice, the correlation properties in solid solutions of semiconductor compounds and the thermodynamic characteristics of these solutions. In recent years, the scientific interests of prof. V.T. A bagel focuses on the study of point defects in semiconductor compounds, their crystal-chemical and thermodynamic characteristics, areas of existence of solid solutions of their own components and impurities in compounds, as well as the interaction between point defects leading to the formation of their associations - microdefects. For work on the study of point defects V.T. Bublik with colleagues received a diploma at the opening ^[5] . The owner of the patent "Method of creating an anti-diffusion barrier on the surface of plates of thermoelectric materials" RUS 2293399 (together with Osvensky VB, Malkova NV, Astakhov MV , Tabachkova N.Yu.) ^[6] .

An important original direction is the study of the formation and behavior of point defects arising during radiation exposure. All these works are the fundamentals of the technology for producing materials and instrument structures in microelectronics. According to the results of these studies, V.T. Bublik published over 300 articles.

V.T. Bublik combines the talents of a scientist and experimenter, under his leadership, experimental facilities have been created, which made it possible to implement subtle methods of structural analysis that meet the current level of research. The experimental basis of the developed by V. T. Bublik material science problems are applied methods of structural analysis.

He reads courses on structural studies of semiconductors and metals that he created and two special courses: "Diffraction methods for studying surfaces and device structures" and "Diffraction methods for studying disordered structures." Under his leadership, theses over 35 postgraduates defended. He is a co-author of the textbook "Methods for the study of structures."

Member of the editorial boards of the journals Factory Lab. Diagnostics of materials "and " News of high schools. Materials of electronic technology .

• Bublik, V.T. The basic principles of transmission electron microscopy: Lecture notes: (For the specialty "Semiconductors and dielectrics") / Ed. Prof., Dr. Techn. Sciences S. S. Gorelika; Mosk. In-t steel and alloys. Department of semiconductor materials science. - Moscow: [b. and.], 1970.
• Fundamentals of the dynamic theory of X-ray interference / V. T. Bublik; Edited by prof. S.S. Gorelika ; Mosk. In-t steel and alloys. Department of semiconductor materials science. - Moscow: [b. and.], 1971.
• Methods for studying the structure of semiconductors and metals: [Proc. manual for universities on spec. "Technology of special materials of electronic engineering", "Semiconductors and dielectrics" and "Semiconductor and microelectronic devices]] / VT Bublik, AN Dubrovina. - Moscow: Metallurgy, 1978.
• Collection of tasks and exercises for the course "Methods for the study of structure": [Proc. manual for universities on spec. "Physics and technology of materials and components of electronic equipment", "Microelectronics and semiconductor devices"] / V. T. Bublik, A. N. Dubrovina. - M.: Higher. shk., 1988.
• Methods for the study of materials and structures of electronics: X-rays. diffraction microscopy: a course of lectures / V. T. Bublik, A. M. Milvidsky. - Moscow: Study, 2006
• Diffraction methods for studying materials and device structures: ion implantation. : study guide / [V. T. Bublik et al.]. - Moscow: MISiS, 2013.

• The ZrO2-based crystals depend on the content of the Y2O3 additive. Borik MA, Bredikhin SI, Bublik VT, Kulebyakin AV, Kuritsyna IE, Lomonova EE, Milovich FO, Myzina VA, Osiko VV, Seryakov SV, Tabachkova N.Yu. Technical Physics Letters. 2017. - V. 43. - №. 3. - p. 289-292.
• ZrO2-based solid solutions. Borik MA, Bublik VT, Eremina RM, Kulebyakin AV, Lomonova EE, Milovich FO, Myzina VA, Osiko VV, Tabachkova NY, Fazlizhanov II, Shustov VA, Yatsyk IV Physics of the Solid State. 2017. - V. 59. - №. 10. - P. 1934-1939.
• Experimental and theoretical study of the thermoelectric properties of copper selenide. Bulat LP, Osvenskii VB, Ivanov AA, Sorokin AI, Pshenay-Severin DA, Bublik VT, Tabachkova NY, Panchenko VP, Lavrentev MG Semiconductors. 2017. - V. 51. - №. 7. - p. 854-857.
• Influence of the yttria dopant on the structure and properties of (ZrO2) 0.91 – x (Sc2O3) 0.09 (Y2O3) x (x = 0–0.02) crystals. Agarkov DA, Borik MA, Bredikhin SI, Bublik VT, Iskhakova LD, Kulebyakin AV, Kuritsyna IE, Lomonova EE, Milovich FO, Myzina VA, Seryakov SV, Tabachkova N.Yu. Russian Microelectronics. 2017. - V. 45. - №. 8-9. - P. 625-632.
• Phase composition, structure and properties of (ZrO2) 1 − x − y (Sc2O3) x (Y2O3) y solid solution crystals (x = 0.08–0.11; y = 0.01–0.02) grown by directional crystallization of the melt. Borik MA, Bredikhin SI, Bublik VT, Kulebyakin AV, Kuritsyna IE, Lomonova EE, Milovich FO, Myzina VA, Osiko VV, Ryabochkina PA, Seryakov SV, Tabachkova N.Yu. Journal of Crystal Growth. 2017. - V. 457. - P. 122-127.
• Structure and conglomeration of crystals grown by skull melting. Borik MA, Bredikhin SI, Bublik VT, Kulebyakin AV, Kuritsyna IE, Lomonova EE, Milovich PO, Myzina VA, Osiko VV, Ryabochkina PA, Tabachkova NY Journal of the American Ceramic Society. 2017. - V. 100. - №. 12. - P. 5536-5547.
• Structure of Bi2Se0.3Te2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method. Demcheglo VD, Voronin AI, Tabachkova N.Yu, Bublik VT, Ponomaryov VF Semiconductors. 2017. - V. 51. - №. 8. - P. 1021-1023.
• Structure of the Cu2Se. Ivanov AA, Sorokin AI, Panchenko VP, Tarasova IV, Tabachkova N.Yu., Bublik VT, Akchurin RH Semiconductors. 2017. - V. 51. - №. 7. - p. 866-869.
• ZrO2-Y2O3 is a solid solution of crystalline changes. Borik MA, Bredikhin SI, Bublik VT, Kulebyakin AV, Kuritsyna IE, Lomonova EE, Milovich FO, Myzina VA, Osiko VV, Ryabochkina PA, Tabachkova NY, Volkova TV Materials Letters. 2017. - V. 205. - P. 186-189.
• Ge-Si mosaic crystals. Borisova D., Abrosimov NV, Shcherbachev K., Klemm V., Schreiber G., Heger D., Juda U., Bublik V., Oettel H. Crystal Research and Technology. 2016. - V. 51. - №. 12. - p. 742-751.
• Improved mechanical properties of thermoelectric (Bi0.2Sb0.8) 2Te3 by nanostructuring. Lavrentev MG, Osvenskii VB, Parkhomenko Yu.N., Pivovarov GI, Sorokin AI, Bulat LP, Kim H.-S., Witting IT, Snyder GJ, Bublik VT, Tabachkova N.Yu. APL Materials. 2016. - V. 4. - P. 104807-1-9.
• Mechanical properties of (Bi, Sb) 2Te3 solid solutions obtained by directional crystallization and spark sintering. Lavrent'ev MG, Osvenskii VB, Pivovarov GI, Sorokin AI, Bulat LP, Bublik VT, Tabachkova N.Yu. Technical Physics Letters. 2016. - V. 42. - №. 1. - P. 105-107.
• Properties for Forms of Bi2Se0.3Te2.7 Solid Solutions Produced by Equal-Channel Angular Pressing. Bogomolov DI, Bublik VT, Tabachkova N.Yu., Tarasova IV Journal of Electronic Materials. 2016. - V. 45. - №. 1. - P. 403-410.
• Electrolyte (ZrO2) 1 - x - y (Sc2O3) x (Y2O3) y (x = 0.035–0.11, y = 0–0.02) Borik MA, Bredikhin SI, Bublik VT, Kulebyakin AV, Kuritsyna IE, Lomonova EE, Milovich FO, Myzina VA, Osiko VV, Seryakov SV, Tabachkova N.Yu. Russian Journal of Electrochemistry. 2016. - V. 52. - №. 7. - P. 655-661.
• Mechanical properties of (Bi, Sb) 2Te3 solid solutions obtained by directional crystallization and spark plasma sintering. Lavrentyev M.G., Osvensky V.B., Pivovarov G.I., Sorokin A.I., Bulat L.P., Bublik V.T., Tabachkova N.Yu. Letters to the Journal of Technical Physics. 2016. - V. 42. - №. 2. - pp. 96-103.
• The structure of the melted crystalline phase has been crystallized and stabilized for the concentration of Y2O3. Borik MA, Bublik VT, Kulebyakin AV, Lomonova EE, Milovich FO, Myzina VA, Osiko VV, Seryakov SV, Tabachkova NY Journal of the European Ceramic Society. 2015. - V. 35. - №. 6. - P. 1889-1894.
• Low-Temperature Transport Coefficients of Nanostructured Bi0.4Sb1.6Te3-Based Thermoelectric Materials Obtained by Spark Plasma Sintering. Bulat LP, Drabkin IA, Osvenskii VB, Parkhomenko Yu.N., Pshenay-Severin DA, Sorokin AI, Igonina AA, Bublik VT, Lavrentev MG Journal of Electronic Materials. 2015. - V. 44. - №. 6. - P. 1846-1850.
• Structure, Phase Composition and Mechanical Properties of ZrO2 Partially Stabilized with Y2O3. Borik MA, Bublik VT, Vilkova MY, Kulebyakin AV, Lomonova EE, Milovich PO, Myzina VA, Ryabochkina PA, Tabachkova NY, Ushakov SN Modern Electronic Materials. 2015. - V. 1. - №. 1. - P. 26-31.
• The Bi0.4Sb1.6Te3 Thermoelectric Material Synthesis. Osvenskiy VB, Panchenko VP, Parkhomenko Yu.N., Sorokin AI, Bogomolov DI, Bublik VT, Tabachkova N.Yu. Journal of Alloys and Compounds. 2014. - V. 586. - №. 1. - P. S413-S418.
• Phase composition, structure and mechanical properties of PSZ (partially stabilized zirconia) crystals as a function of stabilizing impurity content. Borik MA, Bublik VT, Kulebyakin AV, Lomonova EE, Milovich FO, Myzina VA, Osiko VV, Tabachkova NY Journal of Alloys and Compounds. 2014. - V. 586. - №. 1. - P. S231-S235.
• Structure, phase composition and mechanical properties of ZrO2 crystals, partially stabilized by Y2O3. Borik MA, Bublik V.T., Vilkova M.Yu., Kulebyakin A.V., Lomonova E.E., Milovich F.O., Myzina V.A., Ryabochkina PA, Tabachkova N. .Yu., Ushakov SN News of universities. Electronic Technology Materials. 2014. - №. 1. - p. 58-64.
• Features of the technique of investigation of stabilized zirconia crystals. Borik MA, Bublik VT, Kulebyakin AV, Lomonova EE, Myzina VA, Milovich FO, Tabachkova N.Yu. Inorganic Materials. 2013. - V. 49. - №. 15. - P. 1338-1342.
• Technology for the production of ultraviolet light-emitting diodes. Kurin S.Yu., Antipov AA, Barash IS, Bublik VT, Helava H., Mokhov EN, Nagalyuka SS, Roenkov AD, Chemekova T.Yu., Scherbatchev KD, Makarov Yu.N. Russian Microelectronics. 2013. - V. 42. - №. 8. - p. 477-482.
• Zirconia after Thermal Treatment. Borik MA, Bublik VT, Kulebyakin AV, Lomonova EE, Milovich FO, Myzina VA, Osiko VV, Seryakov SV, Tabachkova NY Physics of the Solid State. 2013. - V. 55. - №. 8. - P. 1690-1696.
• Structure and properties of thermoelectric materials based on Bi2 (SeTe) 3 and (BiSb) 2Te3. Bogomolov DI, Bublik VT, Skipidarov S.Ya., Tabachkova N.Yu. Inorganic Materials. 2013. - V. 49. - №. 8, p. 758-762.
• Bi-Sb2-x Te3 fabricated by SPS method. Bulat LP, Drabkin IA, Karatayev VV, Osvenskii VB, Parkhomenko Yu.N., Lavrentev MG, Sorokin AI, Pshenai-Severin DA, Blank VD, Pivovarov GI, Bublik VT, Tabachkova N.Yu. Journal of Electronic Materials. 2013. - V. 42. - №. 7. - P. 2110-2113.
• Thermoelectric properties of the (Bi, Sb) 2Te3-based material obtained by spark plasma sintering. Drabkin IA, Karataev VV, Osvenskii VB, Parkhomenko YN, Sorokin AI, Bulat LP, Pivovarov GI, Bublik VT, Tabachkova NY Russian Microelectronics. 2013. - V. 42. - №. 8. - P. 448-452.
• The structure and mechanical properties of partially stabilized zirconia crystals after heat treatment. Borik MA, Bublik V.T., Kulebyakin A.V., Lomonova E.E., Milovich F.O., Myzina V.A., Osiko V.V., Seryakov S.V., Tabachkova N. .YU. Physics of the Solid. 2013. - T. 55. - №. 8. - p. 1578-1584.
• The structure and properties of thermoelectric materials based on solid solutions Bi2 (SeTe) 3 and (BiSb) 2Te3, obtained by the method of equal-channel angular pressing. Bogomolov D.I., Bublik V.T., Skipidarov S.Ya., Tabachkova N.Yu. Inorganic Materials. 2013. - T. 49. - №. 8. - p. 814-819.
• Comparison of the structures of Bi0.5Sb1.5Te3 thermoelectric materials, obtained by the hot-pressing and spark plasma sintering methods. Bublik VT, Bogomolov DI, Dashevskii ZM, Drabkin IA, Karataev VV, Lavrent'ev MG, Pivovarov GI, Osvenskii VB, Sorokin AI, Tabachkova N.Yu. Russian Microelectronics. 2012. - V. 41. - №. 8. - p. 516-520.
• Effect of Y2O3 stabilizer content and annealing on ZrO2. Borik MA, Bublik VT, Vishnyakova MA, Kulebyakin AV, Lomonova EE, Myzina VA, Milovich FO, Osiko VV, Tabachkova N.Yu. Inorganic Materials. 2012. - V. 48. - №. 2. - p. 156-160.
• Experimental method of thermal decomposition. Lavrentyev MG, Osvensky VB, Mezhennyi MV, Prostomolotov AI, Bublik VT, Tabachkova N.Yu. Journal of Thermoelectricity. 2012. - №. 4. - P. 33-38.
• Structure of materials based on bismuth chalcogenides and obtained by torsional severe plastic deformation. Bogomolov DI, Bublik VT, Sokolov OB, Tabachkova N.Yu. Metal Science and Heat Treatment. 2012. - V. 54. - №. 7-8. - p. 383-386.
• Effect of stabilizing impurity Y2O3 and annealing on structural transformations in ZrO2. Borik MA, Bublik V.T., Vishnyakova MA, Kulebyakin A.V., Lomonova E.E., Myzina V.A., Milovich F.O., Osiko V.V., Tabachkova N. .YU. Inorganic Materials. 2012. - T. 48. - №. 2. - pp. 200-204.
• Changes in the structure of the contact area of ​​thermoelectric materials based on bismuth telluride at elevated temperatures. Bublik V.T., Voronin A.I., Ponomarev V.F., Tabachkova N.Yu. News of universities. Electronic Technology Materials. 2012. - №. 2. - p. 17-20.
• Features of the method for studying crystals of partially stabilized zirconia. Borik MA, Bublik V.T., Kulebyakin A.V., Lomonova E.E., Myzina V.A., Milovich F.O., Tabachkova N.Yu. Factory Lab. Diagnostics of Materials. 2012. - T. 78. - №. 7. - p. 26-30.
• Calculated and experimental study of the formation of the structure of thermoelectric material based on solid solutions of bismuth and antimony chalcogenides obtained by hot extrusion. Lavrentyev M.G., Osvensky V.B., Mezhenniy M.V., Prostomolotov A.I., Bublik V.T., Tabachkova N.Yu. Thermoelectricity. 2012. - №. 4. - p. 36-42.
• Calculated and experimental study of the formation of the structure of thermoelectric material based on solid solutions of bismuth and antimony chalcogenides obtained by hot extrusion. Lavrentyev M.G., Osvensky V.B., Mezhenniy M.V., Prostomolotov A.I., Bublik V.T., Tabachkova N.Yu. Thermoelectricity. 2012. - №. 4. - p. 36-42.
• The structure of materials based on bismuth chalcogenides, obtained by intensive plastic deformation by torsion. Bogomolov D.I., Bublik V.T., Sokolov OB, Tabachkova N.Yu. Metallurgy and Heat Treatment of Metals. 2012. - №. 8. - p. 8-12.
• The structure of the bulk thermoelectric material based on (Bi, Sb) 2Te3, obtained by the method of spark plasma sintering. Bublik V.T., Drabkin I.A., Karataev V.V., Lavrentyev M.G., Osvensky V.B., Parkhomenko Yu.N., Pivovarov G.I., Sorokin A.I., Tabachkova N. .YU. News of universities. Electronic Technology Materials. 2012. - №. 3. - p. 10-18.
• Thermoelectric properties of the material based on (Bi, Sb) 2Te3, obtained by the method of spark plasma sintering. Drabkin I.A., Karataev V.V., Osvensky V.B., Parkhomenko Yu.N., Sorokin A.I., Bulat L.P., Pivovarov G.I., Bublik V.T., Tabachkova N. .YU. News of universities. Electronic Technology Materials. 2012. - №. 3. - C. 18-22.