Thermal breakdown is an irreversible type of breakdown of a pn junction , which is a consequence of an increase in reverse voltage.
During electrical breakdown, the current increases and, reaching a certain value, can begin an irreversible process of destruction of the pn junction. Therefore, one of the most important parameters of a semiconductor device is the maximum allowable reverse voltage ( breakdown voltage ), which preserves the main property of the semiconductor - one-way conductivity. The excess of the voltage value of the breakdown conductivity can lead to failure of the semiconductor device [1] .
Properties of thermal breakdown breakdown voltage
- increase in ambient temperature and deterioration of heat sink conditions reduces conductor breakdown voltage
- decreasing reverse current increases breakdown voltage
Notes
- ↑ Akimova G. N. Electronic equipment. - M .: Route, 2003. - p. 27. - 290 p. - ISBN BBK 39.2111-08.