Microwave diode

Microwave diodes are divided into:

• mixing (for example, 2A101 - 2A109);
• detector (for example, 2A201 - 2A203);
• parametric (for example, 1A401 - 1A408);
• switching and restrictive (for example, 2A503 - 2A524);
• multiplying and tuning (for example, 2A601 - 2A613);
• generator (for example, 3A703, 3A705).

Depending on the internal structure of the diode and the physical effects used in it, microwave diodes of various types are divided into a large number of subtypes. Often diodes of the same subtype can be used in functional units for various purposes. For example, in some cases, microwave multiplier diodes can be used in mixers, etc. The following types of microwave diodes are most known and common:

• avalanche-span diodes (Reed diodes, Misawa diodes, Tager diodes, etc.);
• pin diodes;
• Gunn diodes;
• point contact diodes;
• Schottky or Mott diodes with a transition (“barrier”).

A diode with a pin structure contains between two strongly doped regions of high conductivity n + and p + an active base i-region (from the English intrinsic - intrinsic) with low (close to the intrinsic conductivity of a semiconductor material) conductivity and a long carrier life, i.e. pin- transition . This allows you to reduce the junction capacity and increase the frequency of the element. The conductivity of the diode depends on the wavelength, intensity and modulation frequency of the incident radiation. A depleted layer exists in almost the entire region of intrinsic conductivity, which has a constant width even when turned back on. The region of intrinsic electrical conductivity can be expanded by increasing the recombination zone of electrons and holes. This determines the use of pin diodes in photodetectors.