Konstantin Konstantinovich Svitashev (August 3, 1936, Leningrad - February 11, 1999, Novosibirsk) - Soviet physicist, corresponding member of the USSR Academy of Sciences (1987)
| Konstantin Konstantinovich Svitashev | |
|---|---|
 With son Sergey | |
| Date of Birth | August 3, 1936 |
| Place of Birth | Leningrad |
| Date of death | February 11, 1999 (62 years old) |
| Place of death | Novosibirsk |
| A country |  USSR →  Russia |
| Alma mater | |
| Academic degree | Doctor of Physical and Mathematical Sciences |
| Academic rank | Corresponding Member of the USSR Academy of Sciences |
| Awards and prizes |  |
Biography
During the Great Patriotic War, a seven-year-old child was evacuated from the besieged Leningrad to Novosibirsk, where he went to school, and then lived and studied until graduation.
He graduated from the Physics Department of Leningrad University (1959), worked for three years at the State Optical Institute. S.I. Vavilova , and then returned to Novosibirsk (1962).
Since 1962, he worked at the Institute of Semiconductor Physics, Siberian Branch of the Academy of Sciences of the USSR , graduate student, junior researcher, candidate of physical and mathematical sciences (1966) [1] , senior researcher, laboratory head, and since 1976 - deputy director. Doctor of physico-mathematical sciences (1977) [2] .
Since 1980 - in the Special Design and Technology Bureau of Special Electronics and Analytical Instrumentation SB USSR Academy of Sciences, head of the organization.
In 1990, he headed the Institute of Semiconductor Physics and supervised it through 1998.
Since 1991, Deputy Chairman of the Siberian Branch of the Russian Academy of Sciences.
He died after a long serious illness [3] .
Scientific Interests
Fundamental results in the field of microphotoelectronics, electronic and physico-chemical processes on the surface and interface of semiconductor structures, in theory and practice of studying the surface properties of solids and control of technological processes in the manufacture of semiconductor devices.
He led the development of a number of devices - ellipsometers for monitoring and measuring the optical properties of thin films with an accuracy of one monolayer, and significantly developed the theory of ellipsometry.
Statements
Memory
He was buried at the Southern cemetery in Novosibirsk , the monument on the grave was made by the architect A. Kondratiev in a creative partnership with the widow of K. Svitashev - S. Svitasheva [4] . The upper slice of the massive hibinite stele - a stylized ellipse - symbolizes the main idea of K. Svitashev's scientific work - the development of the science of elliptically polarized light and the application of the elliptical polarization of light in reflection to diagnose ultrathin coatings on the surface of semiconductors.
A plaque to Svitashev was installed on the building of the Institute of Semiconductor Physics named after A.V. Rzhanova SB RAS
Scholarships named after K. Svitashev were established, annually awarded by the Academic Council to the best young employees of the Institute of Semiconductor Physics named after A.V. Rzhanova SB RAS.
Literature
- Wide view / Rzhanov A., Unknown I., Skubnevsky Z., Schekochikhina R., Mardemov A. // Science in Siberia. - 1986. - June 31, N 29. - P.7.
- Korotkoruchko V. Corresponding Member of the Academy of Sciences of the USSR K.K. Svitashev / Korotkoruchko V. // Science in Siberia. - 1988. - N 9. - C.2.
- Kuryshev G. Ten years later / Kuryshev G., Mardezhov A. // Science in Siberia. - 1996. - N 30/31. - C.4
- Khasanov T. Dedicated to the teacher / Khasanov T. // Science in Siberia. - 2006. - N 31. - C.3.