Copper-indium-gallium selenide (also CIGS - English Copper indium gallium selenide ) is a semiconductor compound of copper, indium, gallium and selenium. It is a solid solution of copper-indium selenide (CIS) and copper-gallium selenide, the composition of which is expressed by the formula Cu In x Ga 1 - x Se 2 . It crystallizes in a structure like chalcopyrite. The band gap varies from 1.7 eV at x = 0 to 1.0 eV at x = 1 [1] .
| Copper-indium-gallium selenide | |
|---|---|
 Unit cell of chalcopyrite type crystals __ Cu __ Ga or In __ Se | |
| Are common | |
| Traditional names | Copper-indium-gallium selenide |
| Chem. formula | Cu In x Ga 1 - x Se 2 |
| Physical properties | |
| Molar mass | variable depends from x g / mol |
| Density | ~ 5.7 g / cm³ |
| Thermal properties | |
| T. melt. | from 1070 (x = 0) to 990 (x = 1) |
| Structure | |
| Coordination geometry | inversion-planar |
| Crystal structure | tetragonal type of chalcopyrite |
| Classification | |
| Reg. CAS number | 12018-95-0 (x = 1), 12018-84-7 (x = 0) |
Application
Known for its use in second-generation solar panels [2] . The advantage of CIGS-based thin-film panels is their flexibility.
See also
- Photovoltaics
- A solar panel
- Solar power
Notes
- ↑ Tinoco, T .; Rincón, C .; Quintero, M .; Pérez, G. Sánchez. Phase Diagram and Optical Energy Gaps for CuInyGa1 − ySe2 Alloys (Eng.) // Physica Status Solidi (a) : journal. - 1991. - Vol. 124 , no. 2 . - P. 427 . - DOI : 10.1002 / pssa.2211240206 .
- ↑ Budzulyak I.M. Journal of Technical Physics, 72 6 (2002) 41–43.