Ion beam lithography ( English ion beam lithography ) is a technology for the manufacture of electronic microcircuits using the lithographic process with exposure (irradiation) of the resist by ion beams of nanometer cross section with a wavelength of 10-200 nm.
Content
- 1 Description
- 2 See also
- 3 Literature
- 4 References
Description
In ion beam lithography, light ions — protons, helium ions — are usually used to expose polymer resists. The use of heavier ions allows doping the substrate or creating thin layers of new chemical compounds on it. The differences between electron and ion lithography are due to the larger mass of the ion compared to the mass of the electron and the fact that the ion is a multi-electron system. A thin ion beam has a weaker angular scattering in the target than an electron beam, therefore, ion beam lithography has a higher resolution than electron beam lithography. The energy loss of the ion beam in polymer resistors is about 100 times higher than the energy loss of the electron beam, so the sensitivity of the resist to the ion beam is also higher. This means that the exposure of the resist by a thin ion beam is faster than by an electron beam. The formation of defects of the Frenkel type vacancy – interstitial atom type by an ion beam changes the solubility rate of dielectrics and metals in some solvents by about five times. This allows you to abandon the polymer resist, since the layers of materials themselves behave like inorganic resistes. Ion-beam lithography systems provide a resolution of up to 10 nm.
See also
- Photolithography
- Electronic lithography
- Nanoprint lithography
- Electronic lithography
- Focused ion beam
- Ion beam analysis
Literature
- Gusev A.I. Nanomaterials, nanostructures, nanotechnologies. - M., Nauka-Fizmatlit, 2007 .-- 416 p.
- Valiev K. A. Microelectronics: Achievements and Ways of Development / Valiev K. A. .. - M .: Nauka, 1986. - 141 p.
- Valiev, K.A .; Rakov, A.V. Physical foundations of submicron lithography in microelectronics. - M .: Nauka, 1984 .-- 352 p.
- Chistyakov Yu. D., Rainova Yu. P. Introduction to the processes of integrated micro- and nanotechnologies in 2 volumes / Korkishko Yu. N. .. - M .: BINOM, Laboratory of Knowledge, 2010 - 2014. - 392 p. - ISBN 978-5-9963-0341-0 .
- Forrester, T. A. Intense ion beams. - M .: Mir, 1992 .-- 354 p. - ISBN 5-03-001999-0 .
- Popov V.F.Ion beam installations. - L .: Energy Publishing House, 1981. - 136 p.
- Broaday I., Merey J. Physical foundations of microtechnology. - M .: Mir, 1985 .-- 496 p. - ISBN 200002876210.
- Popov V.F., Gorin Yu.N. Processes and installations of electron-ion technology. - M .: Higher. school, 1988 .-- 255 p. - ISBN 5-06-001480-0 .
- Vinogradov M.I., Maishev Yu.P. Vacuum processes and equipment of ion - and electron-beam technology. - M .: Engineering, 1989 .-- 56 p. - ISBN 5-217-00726-5 .