Chemical vapor deposition on metals allows the production of large-area graphene with good mobility. The method is based on the process of catalytic decomposition of methane or another gas from a carbon source on the surface of a catalyst. The catalyst (substrate) is copper foil. The temperature in the chamber through which the precursor gas is pumped is typically around 1000 ° C. At this temperature, the gas decomposes and graphene forms on the copper surface, and the process stops after the substrate is completely coated. This method allows you to get the best quality layers of a large area. Rolling production technology has also been created. If nickel is used as a foil, carbon dissolves in the metal at high temperature and graphene layers form on the surface upon cooling. The film thickness depends on the amount of dissolved carbon [1] .
Graphene can also be grown on other metals with a hexagonal lattice surface, such as iridium (111) and ruthenium (0001) [2] .
Notes
- ↑ Eletsky, 2011 , p. 246-247.
- ↑ Eletsky, 2011 , p. 250.
References
- Eletsky A.V., Iskandarova I.M., Knizhnik A.A., Krasikov D.N. Grafen: production methods and thermophysical properties // Usp. Fiz. - 2011 .-- T. 181 . - S. 227—258 . - DOI : 10.3367 / UFNr.0181.201103a.0233 .