Spark Factory

The Iskra Plant began in 1966, when a joint resolution of the Central Committee of the CPSU and the Council of Ministers of the USSR No. 729 decided on October 1, 1966 to build a semiconductor plant in Ulyanovsk. Order of the Ministry of Economy and Development of the USSR No. 173 dated June 1, 1971, the plant was included in the number of existing enterprises of the USSR Ministry of Electronic Industry. Already in 1971, more than a million D-9 semiconductor diodes were shipped to consumers.

In 1970-1980, the Iskra plant became one of the largest manufacturers of electronic devices and consumer goods. During these years, the company produced more than 100 million powerful transistors , tens of thousands of calculators and other civilian and military products. The Iskra plant was one of the main manufacturers of multilayer printed circuit boards and computer systems.

With the collapse of the Soviet Union, when entire industries ceased to operate in the country, production at the Iskra plant plummeted. First of all, this affected television technology, the output of consumer goods dropped significantly.

However, despite all the difficulties, the company retained its production and technical potential in all the main areas of its activity, retained its personnel potential.

At present, the owner of JSC NPP Plant Iskra is JSC Concern PVO Almaz-Antey (100% of the shares).

JSC NPP Iskra Plant has all the necessary set of technological and production processes necessary for the implementation of a closed-loop production of semiconductor devices ranging from development to serial production.

JSC NPP Iskra “Plant” is one of the leading manufacturers and suppliers of the element base for manufacturers of electronic equipment, computing equipment, communications equipment and special purpose equipment.

The company has the following business areas:

• production of semiconductor devices (high-power bipolar and field- effect transistors, diodes and modules based on them, transistor and thyristor optocouplers );
• production of medical corona discharge electrodes and gas discharge electrodes ;
• performing R & D in the interests of the enterprises of JSC Concern PVO Almaz-Antey, and the Ministry of Defense of the Russian Federation .

Over the past five years, the plant has carried out significant work on the reconstruction of the existing production, which made it possible to create a compact modern enterprise for the production of electronic products. The company passed certification in the system of voluntary certification “MILITARY REGISTR”, carried out by the certification body for quality management systems at FSI “22 TsNII of the Ministry of Defense of Russia” and in the system of voluntary certification of radio electronic equipment, electrical radio products and military materials “VoENELEKTRONSERT”, conducted by the central body of “VOENELECTRONSERT” FSI "22 Central Research Institute of the Ministry of Defense of Russia". According to the results of certification, OAO NPP “Plant ISKRA” received:

Certificate of Conformity № РР 03.1.3630-2010 dated October 5, 2010, certifying that the quality management system covers the development and production of products: EKPS codes 5961, 5980 and OKVED code 32.10.51;

Certificate No. SVS.01.431.0264.10 of October 5, 2010, certifying that the quality management system and the conditions necessary to ensure the fulfillment of the state defense order in the design and manufacture of semiconductor devices (EKPS 5961 code) and optoelectronic devices (EKPS 5980 code) correspond the requirements of GOST RV 15.002-2003 (in terms of ECB) and RD V 319.015-2006.

• Development of basic technologies for packaging and assembly of electronic modules and units for electronic equipment:

Enclosing and assembling diode-transistor modules. Enclosing microwave MIS X-band . Internal installation of electronic components. The deposition of metallic layers on ceramic substrates.

• Development and production of new types of products:

power modules for digital control of electric drives for EU ZRO; diode-transistor modules for high-density sources of secondary power supply of AFA transceiver modules of a new generation, including: single- and three-phase diode bridges ; Schottky diode assemblies; Half-bridge modules based on MOS transistors with a control circuit; import-substituting field-effect transistors in surface mounting housings for secondary power supplies; electronic and microwave modules made according to the technology of internal installation; Microwave IIA for receiving-transmitting modules X-band AFAR new generation.

• Powerful NPN switching transistors for special purposes
• Powerful NPN-amplifying transistors for special purposes
• High-frequency pulse transistors for special purposes
• Powerful field switching transistors for special purposes
• High Frequency Field Effect Transistors
• Transistor Optocouplers General Purpose
• Special purpose transistor optocouplers
• Specialty thyristor optocouplers
• Medical electrodes to the devices "Ultraton-AMP-2INT", "Iskra-1", "Iskra-3", "ELAD".
• PCVB.432254.017 building

• Official site