BSIM4 is a new generation of physical transistor models with advanced features. It simulates planar MOS transistors manufactured using technological processes of the order of 100 nm and thinner. Examples of physical models: BSIM3 ( BSIM4 ), EKV , HSPICE Level 28. BSIM4 appeared in 2000 [1] .
New BSIM4 Features
In 2004, Berkeley University introduced BSIM4 Version 4.0 with new features.
- A mobile model that explains the Coulomb scattering effect, as well as the dependence of the mobility channel length due to strong alloying .
- An extended model of substrate resistance (rbodyMod = 2), in which the length and width of the channel and the number of contacts are increased.
- Gate resistance parameters, XGW, NGCON, which can now be set as separate parameters (XGL is still a simulated parameter).
- Additional temperature properties of the model parameters: VOFF, VFBSDOFF.
- A new DELVTO parameter that can be used to indicate a change in threshold voltage.
- The new technology of compact placement increases the number of communication channels, increasing the productivity of the model.
- Flexible circuit resistance substrate for RF (radio frequency) modeling.
- New accurate model of thermal noise and its distribution for forced shutter noise.
- Non-quasi-static (NQS) model, including stable RF (radio frequency) modeling and AC modeling, calculating (NQS) effect in capacitance.
- An accurate model of direct gate tunneling for many levels of gate dielectrics.
- Extensive and flexible geometry of stray models for various connections and devices with a large number of contacts.
- Improved model of the effect of space charge dispersion.
- A more accurate and mobile model for predictive modeling.
- Advanced diode characteristics for connections.
- Semiconductor zener diode with and without current limitation.
- The dielectric constant of gate dielectrics are model parameters.
- A comprehensive model of current saturation, including all control mechanisms and restrictions on the speed of current saturation.
Notes
- ↑ Archived copy (inaccessible link) . Date of treatment August 7, 2017. Archived on August 7, 2017.
Links
- https://web.archive.org/web/20061113195732/http://www-device.eecs.berkeley.edu/~bsim3/bsim4.html
- http://eesof.tm.agilent.com/pdf/rf_cmos_Thomas.pdf
- https://web.archive.org/web/20070929060550/http://kvmg.org/adms.php adms code generator, Ngspice, zspice, bsim4.va (BSIM4.3.0 Verilog-A model)
- http://www.kit-e.ru/assets/files/pdf/2004_07_26.pdf , http://kit-e.ru/assets/files/pdf/2004_08_56.pdf