Soviet microchips for building storage devices

Chips RAM 565RU6 and K565RU3

Semiconductor memory devices are widely used to build computer memory, both random access memory and permanent. Often these devices are based on microcircuits . Depending on the design requirements for the computer being created, the type, type and specific series of chips are selected.

Content

Summary of microcircuits used in the USSR to create computer memory

Semiconductor LSI storage devices used in computers
Type of chip	Manufacturing technology	Information volume, Kb	Organization, words × ranks	Address sampling time, ns	Power consumption, mW
Static RAM
K550RU145	ESL	0,064	0.016 K × 1	ten	825
K531RU11P	TTLSH	0,064	0.016 K × 1	40	550
K155RU5	TTL	0.256	0.256 K × 1	90	735
K176RU2	CMOS	0.256	0.256 K × 1	900	nineteen
K561RU2A / B	CMOS	0.256	0.256 K × 1	970/1600	2,8 / 5
K132RU2A / B	n-MOS	one	1 K × 1	950	440
K132RU3A / B	n-MOS	one	1 K × 1	75/125	660
K155RU7	TTL	one	1 K × 1	45	840
K537RU1A / B / V	CMOS	one	1 K × 1	1.3 / 2/4	0.5
KR565RU2A / B	n-MOS	one	1 K × 1	450/850	385
KM132RU8A / B	n-MOS	4K	1K × 4	60/100	900
K541RU2A	I2L	4K	1K × 4	120/90	525
KR537RU3A / B / V	CMOS	4K	4K × 1	320	110
K541RU31 ... 34	I2L	8K	8 K × 1	150	565
KR537RU8A / B	CMOS	16K	2K × 8	220/400	160
KR132RU6A / B	n-MOS	16K	16 K × 1	75/120	140/440
K541RU3 / A	I2L	16K	16 K × 1	150/100	565
Dynamic ram
KR565RU6B / V / G / D	n-MOS	16K	16 K × 1	230 ... 460	150/140/130/120
K565RU5B / V / G / D	n-MOS	64K	64 K × 1	230 ... 460	21 ... 32
K565RU7V / G / D	n-MOS	256 k	256 K × 1	340/410/500	120 ... 150
Masky ROM
K155RE21 / 22/23/24	TTL	1 TO	256 × 4	70	690
KR568RE2	n-MOS	64K	8K × 8	400	590
K569RE1	TTL	64K	8K × 8	350	640
KR568RE3	n-MOS	64K	16 K × 4	800	300
One-time programmable ROM
KR556RT1B	TTLSH	8K	2K × 4	60	740
KR556RT16	TTLSH	64K	8K × 8	85	1000
KR556RT17	TTLSH	4K	0.512K × 8	50	890
KR556RT18	TTLSH	16K	2K × 8	60	950
Reprogrammable ROM
K573RF23 / 24	n-MOS	8K	2K × 4	450	200/580
K573RF33 / 34	n-MOS	16K	1K × 16	200/580	200/580
K573RF2	n-MOS	16K	2K × 8	450	200/580
K537RF5	n-MOS	16K	2K × 8	450	135/580
K573RF31 / 32	n-MOS	32 K	2K × 16	450	450
K537RF41 / 42	n-MOS	32 K	4K × 8	500	700
K573RF43 / 44	n-MOS	32 K	8K × 4	N / A	N / A
K573RF3	n-MOS	64K	4K × 16	450	210/450
K573RF4	n-MOS	64K	8K × 8	500	200/700
K573RF6	n-MOS	64K	8K × 8	500	265/870

Chips for building RAM

IC	Type of shell	Note
K132 series n-MOS static RAM; + 5V
K132RU3A	4112.16-2	Static RAM 1K × 1; 60 ns
K132RU3B	4112.16-2	Static RAM 1K × 1; 110 ns
KM132 series n-MOS static RAM; + 5V
KM132RU3A	201.16-8	Static RAM 1K × 1; 60 ns
KM132RU3B	201.16-8	Static RAM 1K × 1; 110 ns
KM132RU5A	2104.18-1	Static RAM 4K × 1; 60 ns
KM132RU5V	2104.18-1	Static RAM 4K × 1; 55 ns
KM132RU8A	2104.18-1	Static RAM 1K × 4; 60 ns
KM132RU8B	2104.18-1	Static RAM 1K × 4; 100 ns
KM132RU9A	2104.18-1	Static RAM 1K × 4; 50 ns
KM132RU9B	2104.18-1	Static RAM 1K × 4; 90 ns
Series KR132 n-MOS static RAM; + 5V
KR132RU3A	2103.16-6	Static RAM 1K × 1; 60 ns
KR132RU3B	2103.16-6	Static RAM 1K × 1; 110 ns
KR132RU4A	2103.16-6	Static RAM 1K × 1; 33 ns
KR132RU4B	2103.16-6	Static RAM 1K × 1; 50 ns
KR132RU6A	2140YU.20-3	Static RAM 16K × 1; 45 ns; 410 mW
KR132RU6B	2140YU.20-3	Static RAM 16K × 1; 70 ns; 410 mW
KR132RU7	2140YU.20-3	Static RAM 2K × 8; 250 ns
Series KM185 TTL RAM; + 5V
KM185RU7	2108.22-1	RAM 256 × 4; 75 ns; 495 mW
KM185RU7A	2108.22-1	RAM 256 × 4; 45 ns; 450 mW
KM185RU8	2108.22-1	RAM 256 × 8; 45 ns; 925 mW
KM185RU10	2108.22-1	RAM 16K × 1; 50 ns; 750 mW
Series KR185 TTL RAM; + 5V
KR185RU7	210A.22-3	RAM 256 × 4; 75 ns; 495 mW
KR185RU7A	210A.22-3	RAM 256 × 4; 45 ns; 450 mW
KR188 CMOS Series Static RAM
KR188RU2A	238.16-1	Static RAM 256 × 1; 500 ns
K537 series CMOS static RAM; + 5V
K537RU3A	4116.18-1	Static RAM 4K × 1; 250 ns
K537RU3B	4116.18-1	Static RAM 4K × 1; 160 ns
K537RU4A	4116.18-1	Static RAM 4K × 1; 200 ns; 40 μW (in storage mode)
K537RU4B	4116.18-1	Static RAM 4K × 1; 300 ns; 80 μW (in storage mode)
K537RU4V	4116.18-1	Static RAM 4K × 1; 500 ns; 80 μW (in storage mode)
K537RU13	427.18-2.02	Static RAM 1K × 4; 150 ns; 60 μW (in storage mode)
Series KM537 CMOS static RAM; + 5V
KM537RU1	201.16-15	Static RAM 1K × 1; 300 ns
Series KR537 CMOS static RAM; + 5V
KR537RU1	238.16-1	Static RAM 1K × 1; 300 ns
KR537RU2A	2107.18-4	Static RAM 4K × 1; 300 ns
KR537RU2B	2107.18-4	Static RAM 4K × 1; 430 ns
KR537RU3A	2107.18-1	Static RAM 4K × 1; 250 ns; 100 mW; 5 μW (in storage mode)
KR537RU3B	2107.18-1	Static RAM 4K × 1; 160 ns; 100 mW; 250 μW (in storage mode)
KR537RU5A	210A.22-3	Static RAM 1K × 4; 300 ns
KR537RU5B	210A.22-3	Static RAM 1K × 4; 400 ns
KR537RU8A	239.24-2	Static RAM 2K × 8; 220 ns
KR537RU8B	239.24-2	Static RAM 2K × 8; 400 ns
KR537RU10A	239.24-2	Static RAM 2K × 8; 200 ns
KR537RU11A	239.24-2	Static RAM 256 × 16; 440 ns; 1.5 mW (in storage mode)
KR537RU11B	239.24-2	Static RAM 256 × 16; 440 ns; 2.4 mW (in storage mode)
KR537RU13	2107.18-1	Static RAM 1K × 4; 160 ns
Series K541 TTLSH-IIL; + 5V
K541RT1	402.16-21	ROM 256 × 4; 80 ns; 400 mW
K541RU2	427.18-2.03	Static RAM 1K × 4; 120 ns
K541RU2A	427.18-2.03	Static RAM 1K × 4; 90 ns; 525 mW
Series КР541 ТТЛШ-ИИЛ; + 5V
KR541RU1	2107.18-1	Static RAM 4K × 1; 100 ns; 490 mW
KR541RU1A	2107.18-1	Static RAM 4K × 1; 70 ns; 450 mW
KR541RU2	2107.18-1	Static RAM 1K × 4; 120 ns; 550 mW
KE565 n-MOS-RAM series
KE565RU1A	2108.22-8	Dynamic RAM 4K × 1; 400 ns; +5, −5, −12 V
KE565RU1B	2108.22-8	Dynamic RAM 4K × 1; 590 ns; +5, −5, −12 V
Series KR565 n-MOS-RAM
KR565RU1A	210A.22-3	Dynamic RAM 4K × 1; 400 ns; +5, −5, −12V
KR565RU1B	210A.22-3	Dynamic RAM 4K × 1; 590 ns; +5, −5, −12V
KR565RU5V	2103.16-8	Dynamic RAM 64K × 1; 150 ns; + 5V; 195 mW
KR565RU5G	2103.16-8	Dynamic RAM 64K × 1; 200 ns; + 5V; 185 mW
KR565RU5E	2103.16-8	Dynamic RAM about 64K × 1; 250 ns; + 5V; 160 mW
KR565RU6B	2103.16-2	Dynamic RAM 16K × 1; 120 ns; + 5V; 140 mW
KR565RU6V	2103.16-2	Dynamic RAM 16K × 1; 150 ns; + 5V; 120 mW
KR565RU6G	2103.16-2	Dynamic RAM 16K × 1; 200 ns; + 5V; 115 mW
KR565RU6D	2103.16-2	Dynamic RAM 16K × 1; 250 ns; + 5V; 110 mW
K1500 ESL series with high speed; −4.5 V
K1500RU073	4114.24-3	RAM 64 × 4, 6 ns; 990 mW
KM1603 Series
KM1603RU1	210A.22-1	Static RAM 256 × 4; 360 ns; 75 μW (in storage mode)

K565RU3

K565RU3 is an electronic component, a dynamic random access RAM chip with a capacity of 16,384 bits and an organization of 16,384 × 1.

K565RU7

The K565RU7 chip is a semiconductor technology based on n-channel MOS transistors device with an arbitrary sample of a dynamic type with a capacity of 262 144 bits (organization 262 144 × 1 bit).

Chips for building ROMs

Microcircuit PPZU KR556RT11

Microcircuit PPZU K573RF1

IC	Type of shell	Note
Series КР556 ТТЛШ-ППЗУ;
KR556RT2	2121.28-1	PLM matrix, 16 input variables, 48 conjunctions, 8 output variables, TS
KR556RT4	238.16-2	ROM 256 × 4; OK; 70 ns; 683 mW
KR556RT4A	238.16-2	ROM 256 × 4; OK; 45 ns; 683 mW
KR556RT5	239.24-2	ROM 512 × 8; OK; 70 ns; 1W
KR556RT6	239.24-2	ROM 2Kx8; OK; 80 ns; 1W
KR556RT7	239.24-2	ROM 2Kx8; TS; 80 ns; 1W
KR556RT11	238.16-2	ROM 256 × 4; TS; 45 ns; 650 mW
KR556RT16	239.24-2	ROM 8Kx8; TS; 85 ns; 950 mW
KR556RT18	239.24-2	ROM 2Kx8; TS; 60 ns; 900 mW
KR556RT20	239.24-2	ROM 1Kx8; TS; 30 ns; 960 mW
Series KR558 EPPZU; +5, −12V
KR558RP1	405.24-7	EEPROM 256 × 8; 5 μs; 370 mW
KR558RP2A	405.24-7	EEPROM 2Kx8; 350 ns; 490 mW
KR558RR2B	405.24-7	EEPROM 2Kx8; 700 ns; 490 mW
KR558RP4	2121.28-5	EEPROM 8Kx8; 400 ns; 400 mW
KR558HP1	239.24-2	7-bit decimal counter, EEPROM, binary code decoder
KR558HP2	2103.16-6	24-bit shift register, EEPROM 16 × 24; 310 mW
Series KR568 MOS-ROM; +5, +12, −5V
KR568RE1	2120.24-3	ROM static type 2Kx8; 700 ns
KR568RE2	2121.28-5	ROM 8Kx8; 250 ns; 420 mW
KR568RE3	2121.28-5	ROM 16Kx8; 550 ns; 315 mW
Series 573 EPROM
K573RP2	2120.24-1.02	EEPROM 2Kx8; 350 ns; + 5V; 590 mW
K573RP21	2120.24-1.02	EEPROM 1Kx8; 350 ns; + 5V; 590 mW
K573RP22	2120.24-1.02	EEPROM 1Kx8; 350 ns; + 5V; 590 mW
K573RF1	210B.24-5	EPROM 1Kx8; 450 ns; 820 mW
K573RF2	210B.24-5	EPROM with 2Kx8 UV erase; 450 ns; 440 mW
K573RF3	210B.24-5	ROM with UV erase 4Kx16; 400 ns; + 5V; 200 mW
K573RF3A	210B.24-5	ROM with UV erase 4Kx16; 550 ns; + 5V; 446 mW
K573RF3B	210B.24-5	ROM with UV erase 4Kx16; 800 ns; + 5V; 446 mW
K573RF4A	2121.28-8	EPROM 8Kx8; 300 ns; + 5V; 650 mW
K573RF4B	2121.28-8	EPROM 8Kx8; 450 ns; + 5V; 650 mW
K573RF5	210B.24-5	EPROM with 2Kx8 UV erase; 450 ns; + 5V; 525 mW
K573RF6A	2121.28-6.04	EPROM 8Kx8; 300 ns; + 5V; 790 mW
K573RF6B	2121.28-6.04	EPROM 8Kx8; 450 ns; + 5V; 790 mW
K573RF7	2121.28-6	ROM with 32Kx8 UV erase; 300 ns; 600 mW
K573RF11	210B.24-5	ROM with erasure 512 × 8; 450 ns; 820 mW
K573RF12	210B.24-5	ROM with erasure 512 × 8; 450 ns; 820 mW
K573RF13	210B.24-5	EPROM 1Kx8; 450 ns; 820 mW
K573RF14	210B.24-5	EPROM 1Kx8; 450 ns; 820 mW
K573RF21	210B.24-5	EPROM 1Kx8; 450 ns; 440 mW
K573RF22	210B.24-5	EPROM 1Kx8; 450 ns; 440 mW
K573RF23	210B.24-5	EPROM with 2Kx8 UV erase; 450 ns; 440 mW
K573RF24	210B.24-5	EPROM with 2Kx8 UV erase; 450 ns; 440 mW
K573RF31	210B.24-5	EPROM 2Kx16; 400 ns; 400 mW
K573RF32	210B.24-5	EPROM 2Kx16; 400 ns; 400 mW
K573RF33	210B.24-5	EPROM 2Kx16; 400 ns; 400 mW
K573RF34	210B.24-5	EPROM 1Kx16; 400 ns; 400 mW
K573RF41A	2121.28-8	ROM with UV erase 4Kx8; 300 ns; + 5V; 650 mW
K573RF41B	2121.28-8	ROM with UV erase 4Kx8; 450 ns; + 5V; 650 mW
K573RF42A	2121.28-8	ROM with UV erase 4Kx8; 300 ns; + 5V; 650 mW
K573RF42B	2121.28-8	ROM with UV erase 4Kx8; 450 ns; + 5V; 650 mW
K573RF43A	2121.28-8	EPROM 8Kx4; 300 ns; + 5V; 650 mW
K573RF43B	2121.28-8	EPROM 8Kx4; 450 ns; + 5V; 650 mW
K573RF44A	2121.28-8	EPROM 8Kx4; 300 ns; + 5V; 650 mW
K573RF44B	2121.28-8	EPROM 8Kx4; 450 ns; + 5V; 650 mW
K573RF61A	2121.28-6.04	ROM with UV erase 4Kx8; 300 ns; + 5V; 790 mW
K573RF61B	2121.28-6.04	ROM with UV erase 4Kx8; 450 ns; + 5V; 790 mW
K573RF62A	2121.28-6.04	ROM with UV erase 4Kx8; 300 ns; + 5V; 790 mW
K573RF62B	2121.28-6.04	ROM with UV erase 4Kx8; 450 ns; + 5V; 790 mW
K573RF63A	2121.28-6.04	EPROM 8Kx4; 300 ns; + 5V; 790 mW
K573RF63B	2121.28-6.04	EPROM 8Kx4; 450 ns; + 5V; 790 mW
K573RF64A	2121.28-6.04	EPROM 8Kx4; 300 ns; + 5V; 790 mW
K573RF64B	2121.28-6.04	EPROM 8Kx4; 450 ns; + 5V; 790 mW

Notes

Literature

Alishov N.I., Nesterenko N.V., Novikov B.V. et al. Chapter 2.3 BIS memory for building internal memory // Handbook of personal computers / Under. ed. Corr. USSR Academy of Sciences B.N. Malinovsky. - K .: Tekhnika, 1990. - 384 p. - 45,000 copies. - ISBN 5-335-00168-2 .
All domestic microcircuits. - 2nd ed., Revised and supplemented. - M: Dodeka-XXI Publishing House, 2004. - 400 p. - ISBN 5-94120-034-X .
S. V. Yakubovsky, N. A. Barkanov, L. I. Nisselson, and others. Analog and digital integrated circuits. Reference manual. / ed. S.V. Yakubovsky .. - 2nd ed., Rev. and additional .. - M: Radio and communications, 1985. - 432 p. - (Design of REA on integrated circuits).
S. V. Yakubovsky, L. I. Nisselson, V. I. Kuleshova et al. Digital and analog integrated circuits: A Handbook. / ed. S.V. Yakubovsky. - M: Radio and communications, 1990 .-- 496 p. - ISBN 5-256-00259-7 .
V.V. Baranov, N.V. Bekin, A. Yu. Gordonov. Semiconductor LSI Storage Devices. Reference / ed. BUT . Yu. Gordonova and Yu. N. Dyakova .. - M: Radio and communications, 1987. - 360 p.

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